优化IGBT开关性能的自适应变电阻有源驱动电路研究
RESEARCH ON ADAPTIVE VARIABLE RESISTANCE ACTIVE DRIVE CIRCUIT FOR OPTIMIZING IGBT SWITCHING PERFORMANCE
周家民 1黄连生 2陈晓娇 2窦盛 3何诗英 2张秀青2
作者信息
- 1. 安徽建筑大学机械与电气工程学院,合肥 230601
- 2. 中国科学院合肥物质科学研究院等离子体物理研究所,合肥 230031
- 3. 中国科学技术大学研究生院科学岛分院,合肥 230031
- 折叠
摘要
针对IGBT开通过程中的电流及电压振荡提出一种新型自适应IGBT有源栅极驱动电路(NAAGD).该电路结合互补IGBT的电压电流信息进行开通驱动电阻的投切控制,可实现开通过程电流及电压振荡的抑制,且可自适应电压电流等级的变化.与现有有源驱动电路(AGD)方案相比,NAAGD的自适应响应具有更好的即时性;同时,相比传统驱动电路(CGD)增大驱动电阻抑制振荡的方法,可优化开通损耗.最后通过实验验证所提NAAGD的有效性.
Abstract
A novel adaptive active gate driving circuit(NAAGD)is proposed for current and voltage oscillations during IGBT turn-on.The circuit combines the voltage and current information of the complementary IGBT to switch on the drive resistor,which can realize the suppression of the open-pass current and voltage oscillation,and can adapt to the change of voltage and current level.Compared with the existing Active Gate Drive(AGD)scheme,the adaptive response of NAAGD has better immediacy.At the same time,compared with the conventional Gate Drive(CGD),the method of increasing the drive resistance to suppress oscillation is optimized,and the turn-on loss is optimized.Experiments verify the effectiveness of the proposed NAAGD.
关键词
绝缘栅双极型晶体管/自适应/损耗/有源栅极驱动/振荡Key words
insulated gate bipolar transistor(IGBT)/adaptive/loss/active gate drive(AGD)/oscillation引用本文复制引用
出版年
2024
NETL
NSTL
万方数据