Measurement Method of Ohmic Contact Resistivity of Silicon Carbide Pressure Sensor
In view of the low ion diffusion coefficient and high impurity ionization energy of silicon carbide,it is difficult to form reliable ohmic contact.In order to solve the problem of high temperature ohmic contact reliability of silicon carbide pressure sensor chip,the resistivity measurement problem is discussed.By introducing and analyzing the principle of T-LTM test,and combining with the chip production process,the T-LTM test pattern of Ni/Au electrode and N-type silicon carbide is prepared,and the alloy experiments at 700℃ and 1000℃ are carried out in nitrogen atmosphere.The final experimental results show that the alloy temperature has a significant influence on the Ⅰ-Ⅴ linear relationship.Combined with T-LTM test and analysis,the contact resistivity value is determined to verify whether a good ohmic contact is formed.The study provides a technical reference for the development of silicon carbide piezoresistive high temperature pressure sensor.
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