为满足复杂应用环境下对负载提出的严苛要求,设计一种具有宽输入范围的高侧保护控制器电路,可在正常开/关转换和故障条件下实现对高侧NMOSFET的智能控制.电路采用0.18μm 120 V BCD工艺设计,输入电压工作范围为5.5V至65V.在电路芯片中加入保护电路,对上电复位、过压、欠压等进行保护;以振荡器、电荷泵、故障比较器等构成控制电路;为防止芯片误触发关断外部NMOSFET,设计加入故障触发延迟时间电路.仿真结果表明,该电路芯片能够在标准输入电压范围内正常工作,栅源电压大于10.5V,达到预期设计要求.
Design of a High-Side Protection Controller Circuit with Wide Input Range
In order to meet the strict requirements of load in complex application environment,a high-side protection controller circuit with wide input range is designed,which can realize intelligent control of high-side NMOSFET under normal on/off conversion and fault conditions.The circuit is designed by 0.18 μm 120 V BCD technology,and the working range of input voltage is 5.5 V to 65 V.A protection circuit is added to the circuit chip to protect the power-on reset,overvoltage and undervoltage.The control circuit is composed of oscillator,charge pump and fault comparator.In order to prevent the chip from accidentally triggering and turning off the external NMOSFET,a fault triggering delay time circuit is designed.The simulation results show that the circuit chip can work normally in the standard input voltage range,and the gate-source voltage is greater than 10.5 V,which meets the expected design requirements.
万方数据
维普
