Simulation Design of Silicon-Based Junction Barrier Schottky Diode
To achieve the dual objectives of low reverse leakage current and high breakdown voltage in silicon-based junction barrier Schottky diodes,a simulation model of a 60 V JBS diode is established using TCAD software.By studying its working principles in forward conduction and reverse blocking states,the internal electric field distribution is observed by simulating applied voltages.The effects of different P+region spacing on reverse leakage current and voltage withstand capability are simulated.Through analysis of the JBS diode simulation results,an appropriate P+region spacing can be selected to optimize the performance of silicon-based JBS diodes,reducing reverse leakage current and improving voltage withstand capability,which has significant implications for parameter optimization of JBS power semicon-ductor devices.
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维普
