Study on Quantum Transport Properties of Flexible Phosphorene Based on Strain Engineering
This paper investigates the effect of strain engineering on the quantum transport properties of phosphorene.Based on the research background and application prospects of phosphorene in flexible electronic devices,first-principles calculations were employed to systematically study the strain modulation mechanism of phosphorene.By establishing electronic transport models under different strain conditions,the influence patterns of strain on band structure,electron density,and density of states were analyzed,thus verifying the significant anisotropic characteristics exhibited by phosphorene under strain in different directions.This research provides a theoretical foundation for the application of phosphorene in flexible electronics and sensors,confirming the important role of strain engineering in modulating the electrical properties of phosphorene.
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