Preparation and Characterization of Flexible Organic Ferroelectric-Gate Graphene Field-Effect Transistors
To address the mechanical damage issue during direct device fabrication of flexible field-effect transistors on flexible substrates,a fabrication method for flexible organic ferroelectric-gate graphene field-effect transistors based on damage-free transfer is proposed.The micro-nano processing of the device is completely performed on rigid substrates before being transferred to flexible substrates through a liquid-phase method,which can effectively avoid performance degradation caused by stress introduced during device fabrication.Experimental results show that the flexible organic ferroelectric-gate graphene field-effect transistors transferred to PET substrates still maintain typical ferroelectric hysteresis characteristics,with a hysteresis window greater than 20V.After 1000 bending cycles,the device's hysteresis window shows only about 14%reduction,demonstrating excellent bending durability of the prepared flexible graphene transistor devices.This research provides research schemes and problem-solving approaches for the deve-lopment of flexible wearable electronic systems.
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