An U-Shaped High-K Dielectric Film Trench Gate Vertical Field Plate LDMOS
In recent years,with the development of automotive electronics and power drives,LDMOS with higher integration has received attention as a popular power device.How to increase its breakdown voltage and reduce its specific on-resistance has become the key to improve the device's performance.Based on SOI LDMOS technology,a novel structure with a vertical field plate introduced in the SiO2 trench surrounded by a 4 μm high-K dielectric film was proposed in this paper.Compared with the traditional trench LDMOS,the vertical field plate and the high-K dielectric film fully guide the potential lines into the trench,which improves the breakdown voltage.In addition,the metal-insulator-semiconductor capacitive structure formed by the vertical field plate,the high-K dielectric and the drift region can increase the amount of charge on the surface of the drift region and reduce the specific on-resistance.Through 2-D simulation software,by introducing a vertical field plate with a width of 0.3 μm and a depth of 6.8 μm into a depth of 7.5 μm trench,an LDMOS was realized,with the breakdown voltage of 300 V,the specific on-resistance of 4.26 mΩ·cm2,and the Baliga quality factor of 21.14 MW·cm-2.
LDMOShigh-K dielectricvertical field platebreakdown voltagespecific on-resistance
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