Study on a Floating P-Base IGBT with Low EMI and Turn-On Losses
To optimize the trade-off relationship between EMI and E on for the floating P-base IGBT structure,a floating P-base IGBT structure with a dummy gate trench connected to a poly barrier layer was proposed.Two symmetrical dummy gate trenches were introduced in the floating P-base of the new structure,which were connected to each other by polysilicon.The dummy gate trenches divided the floating P-base into three parts,which decreased the number of holes accumulated near the gate trench and the inherent gate displacement current.The simulation results of the two-dimensional structure show that,compared with conventional IGBT,the proposed structure's hole current density near the gate trench is reduces by 90％at low turn-on current.This reduction significantly reduces the peak values of collector current overshoot(ICE)and gate voltage overshoot(VGE),thereby improving the control capability of the gate resistance at dICE/dt and dVKA/dt.For the same turn-on loss,the maximum values of dICE/dt,dVCE/dt and dVKA/dt in the new structure are reduced by 32.22％,38.41％and 12.92％respectively,thus reducing EMI noise and improving the trade-off between EMI noise and turn-on loss of the device.
floating P-baseelectromagnetic interference noiseturn-on energy lossessmall currentinherent displacement current
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