A 1 200 V/20 A SiC MPS with Low Leakage Current and High Surge Current Capability
A 1 200 V/20 A SiC MPS with hexagonal cell realizing low leakage current and high surge current was fabricated through implantation optimization.Under 25 ℃ and 175 ℃ test condition,the results show that its on-state voltage drop(VF)is 1.48 V and 2.03 V,respectively.Owing to optimized implantation and layout design,the maximum electric field at the Schottky contact is only 1.25 MV/cm at 1 200 V.Correspondingly,the leakage current of the device@1 200 V is only 4.3 μA(@25 ℃)and 13.7 μA(@175 ℃),respectively.Moreover,its surge current capability at 25 ℃ and 150 ℃ reaches 258 A and 252 A,which is about 13 times of the rated current.
SiC MPSleakage currenthigh temperature leakage currentsurge current capability
NETL
NSTL
万方数据
