一种具有低泄漏电流和高浪涌电流能力的1 200 V/20 A SiC MPS
A 1 200 V/20 A SiC MPS with Low Leakage Current and High Surge Current Capability
易波 1徐艺 1马克强 2王思亮 2蒋兴莉 2胡强 2程骏骥 1杨洪强1
作者信息
- 1. 电子科技大学集成电路科学与工程学院,成都 611731
- 2. 成都森未科技有限公司,成都 611731
- 折叠
摘要
通过离子注入优化,成功研制了一款六角形元胞设计的1 200 V/20 A的具有低泄漏电流和高浪涌电流能力的SiC MPS芯片.在25 ℃和175 ℃下的测试结果表明,导通压降VF分别为1.48 V和2.03 V;归功于优化的离子注入和元胞设计,1 200 V耐压时,肖特基界面的最强电场强度仅为1.25 MV/cm.研制的MPS的泄漏电流仅为4.3 μA(@25 ℃)和13.7 μA(@175 ℃).并且25 ℃和150 ℃下测试的浪涌电流高达258 A和252 A,约为额定电流的13倍.
Abstract
A 1 200 V/20 A SiC MPS with hexagonal cell realizing low leakage current and high surge current was fabricated through implantation optimization.Under 25 ℃ and 175 ℃ test condition,the results show that its on-state voltage drop(VF)is 1.48 V and 2.03 V,respectively.Owing to optimized implantation and layout design,the maximum electric field at the Schottky contact is only 1.25 MV/cm at 1 200 V.Correspondingly,the leakage current of the device@1 200 V is only 4.3 μA(@25 ℃)and 13.7 μA(@175 ℃),respectively.Moreover,its surge current capability at 25 ℃ and 150 ℃ reaches 258 A and 252 A,which is about 13 times of the rated current.
关键词
SiC/MPS/泄漏电流/高温漏电/浪涌电流能力Key words
SiC MPS/leakage current/high temperature leakage current/surge current capability引用本文复制引用
基金项目
中国博士后科学基金(2020M683661XB)
出版年
2024
NETL
NSTL
万方数据