A Wideband High-PSR Capless-LDO with Body-Ripple Injection
A high-PSR capless-LDO circuit with body-ripple injection based on 40 nm CMOS IC process was designed.The circuit is powered by a 1.1 V power supply,and the LDO output voltage is stable at 0.9 V.Simulation results show that the PSR of conventional capless-LDO circuit increases to a peak at the UGF of the loop and then begin to decrease through the capacitor-to-ground path at the output node.The highest PSR is even greater than 0 dB.The LDO using the new substrate ripple injection technology can adequately suppress the PSR peak and achieve the entire frequency band above-20 dB.Compared with the conventional structure,the PSR at the peak increases by more than 20 dB.The LDO can be applied to RF circuits that require low voltage power supplies.
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