首页|Cu/Co阻挡层中复配缓蚀剂缓蚀机理与研究进展

Cu/Co阻挡层中复配缓蚀剂缓蚀机理与研究进展

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抛光液是化学机械抛光(CMP)的关键要素之一,其中缓蚀剂是抛光液的基本组分之一.传统的缓蚀剂缓蚀效果差,缓蚀效率低.而复配缓蚀剂因缓蚀效率高、缓蚀效果好和环境友好等优势成为CMP领域研究重点.根据文献,分析了唑类缓蚀剂对Cu/Co阻挡层的缓蚀机理,对近五年来新型复配缓蚀剂在国内外CMP过程中的研究进展以及复配缓蚀剂的实验评价和分子动力学模拟进行了归纳总结.同时评价了电化学法中EIS、OCP和Tafel极化曲线,表面分析法中SEM和AFM,分子动力学模拟中DFT和ReaxFF对缓蚀剂缓蚀效果的分析.最后,对于目前复配缓蚀剂的问题进行了总结与展望.
Corrosion Inhibition Mechanism and Research Progress of Compounding Corrosion Inhibitors in Cu/Co Barrier Layers
Slurry is a crucial component of chemical mechanical polishing(CMP),with corrosion inhibitors being a fundamental part.Traditional corrosion inhibitors exhibit poor corrosion inhibition and low efficiency.However,compounded corrosion inhibitors have emerged as a focal point in CMP research owing to their high efficiency,superior corrosion inhibition effects,and environmental friendliness.In this study,the mechanism of azole corrosion inhibitors on Cu/Co barrier layers is analyzed,and a summary of the recent five-year research progress on new composite inhibitors in the CMP process globally is presented.Evaluations were conducted using various methods such as electrochemical techniques(EIS,OCP,and Tafel),surface analysis techniques(SEM and AFM),and molecular dynamics simulations(DFT and ReaxFF)to analyze the corrosion inhibition effect of these inhibitors.Finally,the current challenges and prospects of composite corrosion inhibitors are summarized.

compound corrosion inhibitorscorrosion inhibition mechanismreviewchemical mechanical polishingazole corrosion inhibitorsCu/Co barrier layer

罗博文、高宝红、石越星、李雯浩宇、霍金向、贺斌

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河北工业大学电子信息工程学院,天津 300130

河北省微电子超精密加工材料与技术协同创新中心,天津 300130

河北省微电子专用材料与器件工程研究中心,天津 300130

河北工业大学材料与工程学院,天津 300130

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复配缓蚀剂 缓蚀机理 化学机械抛光 唑类缓蚀剂 Cu/Co阻挡层

国家自然科学基金河北省自然科学基金

61704046F2022202072

2024

微电子学
四川固体电路研究所

微电子学

CSTPCD北大核心
影响因子:0.274
ISSN:1004-3365
年,卷(期):2024.54(2)
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