一种注入增强型快速SOI-LIGBT新结构研究
Novel Injection-Enhanced Fast SOI-LIGBT Structure
黄磊 1李健根 1陆泽灼 1俞齐声 2陈文锁2
作者信息
- 1. 中国电子科技集团公司第二十四研究所,重庆 400060
- 2. 重庆大学电气工程学院,重庆 400044
- 折叠
摘要
薄顶层硅SOI(Silicon on Insulator)横向绝缘栅双极型晶体管(Lateral Insulated-Gate Bipolar Transistor,LIGBT)的正向饱和电压较高,引入旨在减小关断态拖尾电流的集电极短路结构后,正向饱和电压进一步增大.提出了一种注入增强型(Injection Enhancement,IE)快速LIGBT新结构器件(F-IE-LIGBT),并对其工作机理进行了理论分析和模拟仿真验证.该新结构F-IE-LIGBT器件整体构建在薄顶层硅SOI衬底材料上,其集电极采用注入增强结构和电势控制结构设计.器件及电路联合模拟仿真说明:新结构F-IE-LIGBT器件在获得较小正向饱和电压的同时,减小了关断拖尾电流,实现了快速关断特性.新结构F-IE-LIGBT器件非常适用于SOI基高压功率集成电路.
Abstract
Thin-top silicon-on-insulator(SOI)lateral insulated-gate bipolar transistors(LIGBTs)have a high forward saturation voltage drop.When a shorted collector structure is introduced to reduce the trailing current of the turning-off state,the forward saturation voltage drop increases further.A novel fast-switching LIGBT(F-IE-LIGBT)device based on injection enhancement(IE)is proposed in this study,and its working mechanism is theoretically analyzed and verified through a simulation.The F-IE-LIGBT device is built on a thin-top SOI substrate,and its collector is designed using injection-enhanced and potential control structures.Combined simulation results show that the F-IE-LIGBT device can obtain a smaller forward saturation voltage drop,reduce the trailing current of the turning-off state,and achieve a fast turn-off characteristic.The F-IE-LIGBT device is highly suitable for SOI-based high-voltage power integrated circuits.
关键词
SOI/横向绝缘栅双极型晶体管/快速关断/拖尾电流/正向饱和电压Key words
SOI/LIGBT/fast turning-off/trailing current/forward saturation voltage drop引用本文复制引用
基金项目
集成电路与微系统全国重点实验室项目(6142802200510)
国家重点研发计划(2018YFB2100100)
重庆市自然科学基金(cstc2020jcyjmsxmX0572)
中央高校基本科研业务费资助项目(2020CDJ-LHZZ-076)
出版年
2024
NETL
NSTL
万方数据