Gate Charge Characterization Method for p-GaN HEMTs
Unlike the insulated gate structure of the Si-based metal-oxide-semiconductor field-effect transistors(MOSFETs),the gate of p-GaN-enhanced high electron mobility transistors(HEMTs)is a p-n junction,which is highly conductive under a large forward bias condition.The traditional method for the gate charge assumes that all current is injected and stored as gate charge.Thus,it is not applicable to p-GaN HEMT devices because the parameter values would be significantly overestimated.In this study,based on the basic accumulation process of the gate charge,we propose a dynamic capacitance method to extract the gate charge parameters of p-GaN E-HEMTs,which can reduce the impact of the forward leakage current.The capacitance method produces an ideal Miller plateau and characteristic curve,indicating significant potential for practical application.
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