一种p-GaN HEMTs栅电荷表征方法
Gate Charge Characterization Method for p-GaN HEMTs
刘震 1潘效飞 2龚平 2王燕平 1叶斯灿 1卢澳 1闫大为3
作者信息
- 1. 江南大学电子工程系物联网技术应用教育部工程研究中心,江苏无锡 214122
- 2. 无锡华润安盛科技有限公司,江苏无锡 214000
- 3. 江南大学电子工程系物联网技术应用教育部工程研究中心,江苏无锡 214122;无锡芯鉴半导体技术有限公司,江苏无锡 214000
- 折叠
摘要
与Si基金属-氧化物-半导体场效应晶体管(MOSFETs)的绝缘栅结构不同,p-GaN增强型高电子迁移率晶体管(HEMTs)的栅极结构为pn结,其在较大正向电压下处于导通状态,漏电导较大.传统栅电荷测试方法假设栅极注入电流全部存储为栅电荷,因此不适用于p-GaN HEMTs器件,否则会严重高估数值.鉴于此,基于栅电荷积累的基本过程,提出了利用动态电容法来减小漏电流影响来提取p-GaN E-HEMT的栅电荷参数.结果表明,该方法能够得到更理想的栅电荷米勒平台和特性曲线,结果更符合实际,具有重要的应用价值.
Abstract
Unlike the insulated gate structure of the Si-based metal-oxide-semiconductor field-effect transistors(MOSFETs),the gate of p-GaN-enhanced high electron mobility transistors(HEMTs)is a p-n junction,which is highly conductive under a large forward bias condition.The traditional method for the gate charge assumes that all current is injected and stored as gate charge.Thus,it is not applicable to p-GaN HEMT devices because the parameter values would be significantly overestimated.In this study,based on the basic accumulation process of the gate charge,we propose a dynamic capacitance method to extract the gate charge parameters of p-GaN E-HEMTs,which can reduce the impact of the forward leakage current.The capacitance method produces an ideal Miller plateau and characteristic curve,indicating significant potential for practical application.
关键词
p-GaN/HEMTs/栅电荷/电流法/电容法Key words
p-GaN HEMTs/gate charge/current method/capacitance method引用本文复制引用
基金项目
江苏省研究生科研与实践创新计划(KYCX18_1855)
出版年
2024
NETL
NSTL
万方数据