Breakdown Simulation Analysis of Asymmetric Resistive Field Plate Field Effect Devices
Using TCAD simulation to study the physical model and optimal structure of a two-dimensional tightly coupled resistance field plate current modulation principle.By optimizing key process and material parameters,the peak electric field in the drift region of the device was improved.Finally,under the same drift region doping,the breakdown voltage increased by 273％compared to the theoretical breakdown voltage of a one-dimensional PN junction.Under the same normalized breakdown voltage variation range of 10％,the allowable redundancy of charge variation in the drift region was expanded by 15 times compared to the existing traditional PN superjunction.Compared to symmetric resistive field-effect devices,asymmetric optimized resistive field-effect devices can better achieve structural miniaturization and high-density design under existing processes.
two-dimensional tightly coupled resistance field platebreakdown voltageTCAD
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