A V-band High-power Broadband Power Amplifier in 55 nm CMOS Technology
A V-band high-power broadband power amplifier was designed in a 55-nm CMOS process.The neutralization capacitor technology was used to improve the gain and stability of the power amplifier.The two-way power combining network was adopted to increase output power.By distributing the peak gains of every stage at different frequencies,the gain bandwidth of the power amplifier achieves a wide and flat response.With a 1.2 V supply,the simulation result shows that the power amplifier consumes a DC power of 184 mW and achieves the 3-dB bandwidth of 14.5 GHz,the saturated output power(Psat)of 13.2 dBm,the maximum power-added efficiency(PAE)of 10.2％,and the maximum small-signal gain of 16.6 dB,The proposed power amplifier has the advantages of broadband and high output power.
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