一种基于55 nm CMOS工艺的V波段高功率宽带功率放大器
A V-band High-power Broadband Power Amplifier in 55 nm CMOS Technology
肖晗 1姜浩然 1王研 2陈强 1桑磊1
作者信息
- 1. 合肥工业大学微电子学院,合肥 230002
- 2. 中国电子科技集团公司第三十八研究所,合肥 230031
- 折叠
摘要
基于标准55 nm CMOS工艺设计了一款工作在V波段下的高输出功率宽带功率放大器,放大器采用交叉中和电容技术来提高功率放大器的增益和稳定性,并通过两路功率合成网络提高输出功率.通过多频点叠加技术设计级间变压器,拓展放大器带宽.仿真结果表明,在1.2 V电源电压下,放大器的3 dB带宽为14.5 GHz,静态直流功耗为184 mW,饱和输出功率为13.2 dBm,小信号增益为16.6 dB,具有高宽带、高输出功率的优点.
Abstract
A V-band high-power broadband power amplifier was designed in a 55-nm CMOS process.The neutralization capacitor technology was used to improve the gain and stability of the power amplifier.The two-way power combining network was adopted to increase output power.By distributing the peak gains of every stage at different frequencies,the gain bandwidth of the power amplifier achieves a wide and flat response.With a 1.2 V supply,the simulation result shows that the power amplifier consumes a DC power of 184 mW and achieves the 3-dB bandwidth of 14.5 GHz,the saturated output power(Psat)of 13.2 dBm,the maximum power-added efficiency(PAE)of 10.2％,and the maximum small-signal gain of 16.6 dB,The proposed power amplifier has the advantages of broadband and high output power.
关键词
功率放大器/CMOS/毫米波集成电路/高功率/宽带Key words
power amplifier/CMOS/MMIC/high power/broadband引用本文复制引用
基金项目
国家重点研发计划(2021YFA0715301)
出版年
2024
NETL
NSTL
万方数据