一种高频单片GaN DC-DC降压转换器设计
Design of a High-frequency Monolithic GaN DC-DC Buck Converter
何凡 1沈红伟 2来龙坤 2罗卫军3
作者信息
- 1. 中关村芯海择优科技有限公司,北京 100094
- 2. 北京智芯微电子科技有限公司,北京 102211
- 3. 中国科学院微电子研究所,北京 100029
- 折叠
摘要
基于全耗尽型(D-mode)0.25μm硅基氮化镓(GaN-on-Si)工艺,设计了 一款高频单片GaN DC-DC降压转换器芯片.该芯片集成了驱动电路和半桥功率级电路,驱动电路中电平放大功能通过有源上拉结构实现,在100～200 MHz频率范围内,单片GaN DC-DC降压转换器可直接被0.7 V的高速脉冲信号控制,无需片外模块,其峰值功率级效率达到92.2％,峰值总效率达到84.24％,峰值功率为7.7 W.相较于前期工作,芯片工作范围从100 MHz提升至200 MHz,在保证芯片效率性能的情况下,实现了对工作频率的大幅提升.
Abstract
This study presents the design and implementation of a high-frequency monolithic GaN DC-DC buck converter,fabricated using a 0.25 μm D-mode GaN-on-Si process.The chip integrates both the driver and the half-bridge power stage.The level-amplifying function in the driver is achieved through an active pull-up structure.Within the frequency range of 100-200 MHz,the proposed monolithic GaN DC-DC buck converter can be directly controlled by high-speed pulse signals with a voltage swing as low as 0.7 V,without requiring external off-chip modules.It achieves a peak power-stage efficiency,overall efficiency,and output power of 92.2％,84.24％and 7.7 W respectively.Compared with previous research,this chip extends the operating frequency from 100 to 200 MHz while maintaining efficient performance,representing a significant enhancement in operating frequency.
关键词
GaN/DC-DC降压转换器/单片电路/驱动电路/有源上拉结构Key words
GaN DC-DC buck converter/monolithic circuit/driver/active pull-up引用本文复制引用
基金项目
北京市科技计划项目资助项目(Z231100003823007)
出版年
2024
NETL
NSTL
万方数据