Enhanced Anti-interference Undervoltage Protection Circuit for GaN Driver Chips
An undervoltage protection circuit with low temperature coefficient,low power consumption,high back-difference voltage,and double comparison is proposed to solve the problems of the low voltage misopening,high common-mode transients,and poor anti-interference ability of gate of GaN devices.The circuit adopts a double comparison reference circuit,sets a reasonable comparison voltage,increases the circuit back difference voltage,and significantly improves the anti-interference ability of the circuit.When the power supply reaches the preset voltage,the system releases the protection lock,the GaN device path is opened,and the power supply drives the gate of the posterior GaN device to achieve the undervoltage protection function of GaN device and improve stability.The circuit was designed using a 0.18 μm BCD process.The simulation results show that when the power supply reaches 8.5 V,the circuit removes the undervoltage protection function,and the bandgap reference circuit outputs a high precision 5 V voltage of 1.5X 10 5/℃ to the gate end of GaN driver circuit.When the power is reduced to 8 V,the circuit begins the undervoltage protection function,and the chip system is turned off to achieve the GaN device protection function.The return difference voltage is 0.5 V and the static current is 60 μA.The undervoltage protection circuit satisfies the requirements of low temperature coefficient,low power consumption,and high return difference voltage.
GaN driverundervoltage protection circuitlow voltage errordouble comparative
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