GaN驱动芯片的增强型抗干扰欠压保护电路
Enhanced Anti-interference Undervoltage Protection Circuit for GaN Driver Chips
杨潇雨 1杨曼琳 1吴昊 1王妍 1汪紫薇 1蒲阳1
作者信息
- 1. 集成电路与微系统全国重点实验室,重庆 400060
- 折叠
摘要
针对汽车电子高性能GaN驱动芯片需求,为解决GaN器件栅极存在低压误开、高共模瞬态、抗干扰能力差等问题,提出了一种低温度系数、低功耗、高回差电压、具有双重比较的欠压保护电路.该电路采用双重比较参考电路,设置合理的比较电压,增大电路回差电压,极大提高了电路的抗干扰能力.电源上电至预设电压后,系统解除保护锁定,GaN器件通路开启,电源驱动后级GaN器件栅极,实现GaN器件欠压保护功能,提高稳定性.采用0.18 μm BCD工艺进行设计.仿真结果表明,电源上电至8.5 V时,电路解除欠压保护功能,带隙基准电路输出1.5×10-5/℃高精度5 V电压至GaN驱动电路栅端.电源下电至8 V时,电路启动欠压保护功能,芯片系统关断,实现GaN器件保护功能.回差电压为0.5 V,静态电流为60 μA.该欠压保护电路满足低温度系数、低功耗、高回差电压等要求.
Abstract
An undervoltage protection circuit with low temperature coefficient,low power consumption,high back-difference voltage,and double comparison is proposed to solve the problems of the low voltage misopening,high common-mode transients,and poor anti-interference ability of gate of GaN devices.The circuit adopts a double comparison reference circuit,sets a reasonable comparison voltage,increases the circuit back difference voltage,and significantly improves the anti-interference ability of the circuit.When the power supply reaches the preset voltage,the system releases the protection lock,the GaN device path is opened,and the power supply drives the gate of the posterior GaN device to achieve the undervoltage protection function of GaN device and improve stability.The circuit was designed using a 0.18 μm BCD process.The simulation results show that when the power supply reaches 8.5 V,the circuit removes the undervoltage protection function,and the bandgap reference circuit outputs a high precision 5 V voltage of 1.5X 10 5/℃ to the gate end of GaN driver circuit.When the power is reduced to 8 V,the circuit begins the undervoltage protection function,and the chip system is turned off to achieve the GaN device protection function.The return difference voltage is 0.5 V and the static current is 60 μA.The undervoltage protection circuit satisfies the requirements of low temperature coefficient,low power consumption,and high return difference voltage.
关键词
GaN驱动电路/欠压保护电路/低压误开/双重比较Key words
GaN driver/undervoltage protection circuit/low voltage error/double comparative引用本文复制引用
基金项目
重庆市自然科学基金面上项目(CSTB2023NSCQ-MSX0173)
出版年
2024
NETL
NSTL
万方数据