基于多MEMS梁的微波功率检测芯片
Microwave Power Detection Chip Based on Multi MEMS Beams
孙浩宇 1王德波1
作者信息
- 1. 南京邮电大学集成电路科学与工程学院,南京 210023
- 折叠
摘要
为了优化MEMS微波功率检测芯片的微波性能,提高其制备的可靠性,建立了悬臂梁结构在线式MEMS微波功率检测芯片的S参数模型,研究了悬臂梁的数目对微波功率检测芯片微波性能的影响.对多梁结构微波功率检测芯片微波性能进行理论推导和仿真,制备了单梁、双梁结构MEMS微波功率检测芯片样品,并进行了测试.结果表明,在8～12 GHz的频率范围内,单梁结构的微波功率检测芯片回波损耗小于-27 dB,双梁结构的微波功率检测芯片回波损耗小于-18.5 dB,单梁、双梁微波功率检测芯片传输特性变化趋势与理论值基本一致,验证了 S参数模型的正确性.
Abstract
To optimize the microwave performance of MEMS microwave power detection chips and enhance their preparation reliability,this study established an S-parameter model for an online MEMS micro wave power detection chip with a cantilever beam structure.The impact of the number of cantilever beams on the microwave performance of the microwave power detection chip was investigated.Theoretical derivation and simulation were conducted to analyze the micro wave performance of multi-beam structure micro wave power detection chips.Additionally,single-beam and double-beam structure MEMS microwave power detection chip samples were prepared for testing.The results reveal that in the frequency range of 8-12 GHz,the reflection loss of the microwave power detection chip with a single-beam structure is less than-27 dB,whereas the reflection loss of the microwave power detection chip with a double-beam structure is less than-18.5 dB.The trend of transmission characteristics changes of the single-and double-beam microwave power detection chips is consistent with the theoretical values,validating the accuracy of the S-parameter model.
关键词
微机电系统/功率检测芯片/多梁/S参数Key words
MEMS/power detection chip/multi beam/S parameter引用本文复制引用
基金项目
国家自然科学青年基金资助项目(61704086)
中国博士后科学基金资助项目(2017M621692)
江苏省博士后基金资助项目(1701131B)
江苏省研究生科研与实践创新计划项目(SJCX23_0297)
出版年
2024
NETL
NSTL
万方数据