Heat Dissipation Structure Based on Microsystem Packaging on a Silicon Substrate
Based on the good matching performance of the thermal expansion coefficient between a silicon substrate and a chip and the high-density interconnection technology characteristics of a through-silicon via(TSV),silicon substrates are widely used in high-integration and high-reliability microsystem packaging.However,the presence of large amounts of heat in the RF link may affect the normal functioning of the chip at high temperatures and cause reliability problems such as delamination and interconnection failure.Therefore,the heat dissipation design of the silicon substrate packaging system is very important.In this study,considering a typical silicon substrate package as an example,the effects of three heat dissipation structures and different convection conditions on the heat dissipation of the chip inside the package are investigated using numerical simulation methods.Additionally,the heat dissipation effects of the three types of A,B,and C structures(PCB,PCB copper board& heatsink)are compared with those of the original package.The results show that the heat dissipation efficiency of silicon-based packaging can be improved by increasing the heat exchange coefficient between the package and the external flow field,increasing the heat dissipation area of the package,and increasing the thermal conductivity of the package.This study demonstrates that the optimal heat dissipation structure and working conditions are type C(PCB copper board heatsink)under forced convection conditions.