为了快速筛选出由电流崩塌、阈值漂移导致失效的氮化镓(GaN)器件,提出了一种基于晶圆测试的创新筛选方法,旨在更好地筛选出高可靠性的650 V增强型GaN功率器件,在封装之前消除固有缺陷导致的动态失效,解决实际应用中的动态可靠性问题.详细介绍了快速筛选的基本原理,并通过电子器件工程联合委员会(JEDEC)可靠性测试、动态高温工作寿命(DHTOL)测试和加速开关寿命试验(SALT)证明该快速筛选方法的有效性.实验结果表明,该筛选方法能快速筛选出在晶圆段有缺陷的650 V GaN器件,并有助于简化GaN功率器件在量产阶段的可靠性认证流程.
Rapid Screening Method to Improve Dynamic Reliability in High-voltage Normally-off GaN Power HEMTs
An innovative screening method based on chip probing(CP)tests is proposed in this study to quickly screen out gallium nitride(GaN)device failures due to current collapse and threshold voltage drift.It is demonstrated to screen the highly reliable 650-V enhanced GaN power devices,eliminate the GaN devices with intrinsic dynamic failures before packaging,and solve dynamic reliability problems in practical applications.The principle of the screening method is presented in detail.The effectiveness of the rapid screening method was proved through a Joint Electron Device Engineering Council(JEDEC)qualification,dynamic high temperature operating life(DHTOL),and switching accelerated lifetime test(SALT).Experimental results showed that the screening method can quickly screen 650 V GaN devices with defects in the chip probing and simplify the reliability certification process of GaN power devices in mass production.
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