针对目前业界主流伯克利短沟道绝缘栅场效应晶体管模型绝缘体上硅(Berkeley Short-Channel Insulated Gate Field Effect Transistor Model Silicon-On-Insulator,BSIMSOI)模型无法满足高温集成电路仿真需求的问题,开展了绝缘体上硅(Silicon-On-Insulator,SOI)金属氧化物半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,M OSFET)器件高温模型研究.提出了一种应用干部分耗尽型绝缘体上硅(Partially Depleted Silicon-On-Insulator,PDSOI)器件高温漏电的建模方法,通过引入亚阈值漏电参数的温度关系模型,对现有BSIMSOI模型进行优化,获得了适用于250 ℃的PDSOI MOSFET高温模型.然后利用0.18 μm PDSOI MOSFET进行高温模型的参数提取与验证,模型仿真数据与测试数据拟合良好,尤其是漏电流误差减小到5％以内,大大提高了器件模型高温下的仿真精度.
Investigation on High-temperature Model of 0.18 μm PDSOI MOSFET
In response to the problem that the current mainstream BSIMSOI model cannot meet the simulation requirements of high-temperature integrated circuits,research is conducted on the high-temperature model of SOI MOSFET devices.In this study,a modeling method for the high-temperature leakage of PDSOI devices is proposed.By introducing the temperature relationship model of the sub-threshold leakage parameter,the existing BSIMSOI model was optimized,and finally,a high-temperature model of PDSOI MOSFET applied to 250 ℃ was obtained.Then,the parameters of the high-temperature model were extracted and verified using the data of 0.18 μm PDSOI MOSFET.The simulation data of the model could be fitted well with the test data,especially the leakage error was reduced to less than 5％,significantly improving the simulation accuracy of the device model at high temperatures.
BSIMSOIPDSOIsub-threshold leakagehigh-temperature model
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