兼顾纵向PNP晶体管高电流增益和高击穿特性,设计了一种基于绝缘体上硅(SOI)全介质隔离的P外延互补双极工艺,通过优化纵向PNP晶体管的基区掺杂浓度和有效基区宽度,获得一种高电流增益的纵向PNP晶体管,器件增益β≥500,耐压大于等于30 V.
Novel High-gain Single Polycrystalline Vertical PNP Transistor Devices
Considering the high current gain and high breakdown effect of vertical PNP transistors,a P-epitaxial complementary bipolar process based on the full dielectric isolation of silicon on an insulator was designed.By optimizing the base doping concentration and effective based width of the vertical PNP transistor,a high current gain vertical PNP transistor was obtained with β≥500 and VCE≥ 30 V.
P-epitaxialhigh current gainpoly-silicon emissionvertical PNP
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