This study introduces a new type of integrated buried Zener diode,fabricated via a 40-V high-voltage bipolar process,and investigates its stability.The new diode is characterized by an adjustable breakdown voltage.Further,the Zener breakdown region is buried in the silicon body,thereby avoiding the surface.Moreover,the diode has a low internal resistance and low noise.The study first analyzes the reasons behind the insufficient long-term and thermal stabilities of existing subsurface integrated Zener diodes in the 40-V high-voltage bipolar process.Subsequently,the working mechanism of the new integrated buried Zener diode is introduced.Aging tests were performed on the new diode,and the effectiveness of its structure was verified by analyzing the test data.
关键词
集成隐埋齐纳二极管/稳定性/反向击穿/电压温度系数/高压双极工艺
Key words
integrated buried zener diode/stability/reverse breakdown/voltage temperature coefficient/high-voltage bipolar process
维普
万方数据