Monolithic Heterogeneous Integration of GaN and Si via a Selective Epitaxy Method
Currently,the monolithic heterogeneous integration of GaN devices with Si integrated circuits(ICs)is one of the cutting-edge research directions in the field of microelectronics.The selective epitaxy method,which defines a system directly from a material,is one of the most promising technological pathways for monolithic heterogeneous integration.However,the high-temperature process of selective epitaxy for GaN seriously affects the performance of Si ICs.To address this issue,a thermal-diffusion-margin-reservation(TDMR)technique is proposed for designing MOSFET channels.The feasibility and validity of the TDMR technique were verified through theoretical analyses and simulations.The results indicate that the proposed technique overcomes the inherent defects of the selective epitaxial method,facilitating the realization of GaN/Si monolithic heterogeneous integration while guaranteeing Si IC functionality.This study provides useful insights for GaN/Si monolithic heterogeneous integration.
GaN/Si monolithic heterogeneous integrationselective area epitaxyTDMR
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