在高压GaN半桥栅驱动系统应用中,需要通过电平位移电路来实现信号在不同电压域之间的转换.为了保证转换过程中的信号完整性,设计了一种面向GaN驱动的高噪声抗扰度电平位移电路.在半桥开关节点电压发生快速切换时,针对电路内部大寄生电容节点充放电导致输出误翻转的问题,采用交叉耦合方式抑制共模噪声电流传递,实现了较高的噪声抗扰度.另外,采用电压-电流转换技术提高了抗负压能力.基于0.8 μm 600 V高压BCD工艺进行电路设计.仿真结果表明,该电平位移电路平均传输延时为5.62 ns,dV/dt噪声抗扰度为200 V/ns,在6 V电源电压下允许开关节点负压低至-4.5 V.
High Noise Immunity Level Shifter for GaN Driver
In the high-voltage GaN half-bridge gate driver,a level shifter is required to convert signals between different voltage domains.To maintain signal integrity during the conversion process,this study proposes a level shifter with high noise immunity for a GaN driver.During fast switching of the half-bridge switch node voltage,aiming at the output signal malfunction caused by the charging and discharging of the large parasitic capacitance nodes within the circuit,high noise immunity was achieved via cross-coupling to suppress the common mode noise current transmission.In addition,the negative voltage tolerance was improved using the voltage-to-current conversion technique.The circuit was designed in a 0.8 μm 600 V high voltage BCD process.The simulation results showed that the level shifter had an average propagation of 5.48 ns,a dV/dt noise immunity of 200 V/ns,and an allowable switch node negative voltage swing to-4.5 V at a 6 V supply voltage.
GaN half-bridge gate driverlevel shifterhigh noise immunity
万方数据
维普
