介绍了关于IGBT的注入增强原理,以及使用Sentaurus TCAD软件对不同Mesa宽度以及不同沟槽栅长度的器件进行了仿真优化.根据仿真结果以及第三代FS Trench设计平台,设计了一款650 V MPT-IGBT(Micro-Pattern Trench IGBT).根据流片样品的测试结果表明,相比于传统的元胞节距(pitch)为4.5 μm IGBT,本文的器件可以在降低39％正向压降的同时,关断损耗降低50.6％,实现相对于传统IGBT性能的提升.且该器件结构完全兼容现有的制造工艺,不需要额外进行制造工艺的研发.
Design and Optimization of a 650 V Micro-pattern Trench IGBT
In this study,the injection enhancement principle of IGBT is investigated and a device with different Mesa widths and trench gate lengths is simulated and optimized via Sentaurus TCAD.Based on the simulation and third-generation FS design platform,a 650 V micro-pattern trench IGBT(M PT-IGBT)was designed and taped out.The testing results indicate that compared with the traditional IGBT with a 4.5 μm cell pitch,the forward voltage drop and turn-off losses of the M PT-IGBT samples reduced by 39％and 50.6％,respectively.Moreover,the existing microelectronic processes fully satisfy the manufacture of the M PT-IGBT without requiring additional processes to be investigated.
万方数据
维普
