Performance of Anti-radiation Power Supply Based on SiC MOSFETs
The radiation resistance of third-generation SiC semiconductors has become a hot research topic both in China and internationally,owing to the vigorous development of the aerospace industry.Currently research and experiments predominantly focus on device level single event burnout,increased leakage current,and threshold voltage drift,under static bias conditions.Research on the device level irradiation effects on SiC MOSFETs was conducted to obtain the safe operating range for single particle irradiation.Based on this,an anti-radiation power supply was designed and used to verify the electrical,thermal,and anti-radiation performance of SiC MOSFETs.
wide bandgap semiconductorSiCradiation effectsingle particle radiationanti-radiation power supply
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维普
