首页|一种双环快速瞬态响应无片外电容LDO

一种双环快速瞬态响应无片外电容LDO

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针对传统低压差线性稳压器(LDO)需要离片大电容的不足,基于 180 nm CMOS工艺设计了一款双环快速瞬态响应的无片外电容LDO.该LDO采用极点分裂技术,以保证在不同负载电流情况下的稳定性,并通过瞬态增强电路检测输出电压的波动来为功率管栅极提供额外充、放电电路,以减小系统的过冲电压.同时,在传统模拟环路的基础上增加了数字辅助环路,以提升LDO的最大负载电流.仿真结果表明,当电源电压为 1.8 V,输出电压为1.5 V,该LDO负载电流最大值为 275 mA,空载静态电流为 39 μA.负载电流 1~250 mA在 1 μs的时间跳变时,上冲电压为 66 mV,下冲电压为 77 mV.结果表明LDO的带载能力、瞬态响应性能在双环路加持下得到显著提升.
A capacitor-less low dropout regulator design with double-loop and fast transient response
In view of the disadvantage of traditional low-voltage differential linear voltage regulator(LDO)requiring large external capacitors,a double loop fast transient response LDO circuit without external capacitors was designed based on standard CMOS technology of 180 nm.The circuit uses Miller compensation and composite transistor technology to ensure the stability of LDO under different load current conditions.This circuit uses pole splitting technology to ensure the stability of LDO under different load currents.At the same time,the transient enhancement circuit is used to detect the voltage fluctuation of the output terminal to provide additional charging and discharging circuit for the power tube grid,which reduces the upshot and downshot voltage of the LDO output terminal.In addition to the traditional analog loop,a digital loop is added to increase the maximum load current of LDO significantly.The simulation results show that when the supply voltage is 1.8 V and the output voltage is 1.5 V,the maximum load current of the LDO is 275 mA and the no-load static current is 39 μA.When the load current ranges from 1 to 250 mA and the time jumps from 1 μs,the upstroke voltage is 66 mV and the downstroke voltage is 77 mV.The load capacity and transient response performance are significantly improved due to the dual loop circuit.

output-capacitor-lessLDOpole splittingfast transient response

奥鹏龙、李海鸥、徐卫林、王媛

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桂林电子科技大学 广西高校微电子器件与集成电路重点实验室,广西 桂林 541004

桂林电子科技大学 广西精密导航技术与应用重点实验室,广西 桂林 541004

无片外电容 低压差线性稳压器 极点分裂 瞬态增强

国家自然科学基金国家自然科学基金广西精密导航技术与应用重点实验室基金广西研究生教育创新计划云南省科技重大专项计划新材料专项

6206400262174041DH202212YCSW2023305202102AB080008-2

2024

微电子学与计算机
中国航天科技集团公司第九研究院第七七一研究所

微电子学与计算机

CSTPCD
影响因子:0.431
ISSN:1000-7180
年,卷(期):2024.41(8)