This study establishes a physical link between material defects and back-gating effects in GaN power devices through experimental characterization and theoretical calculations.GaN high electron-mobility transistors were first fabricated on the GaN-on-Si platform.Then,the defect level under back-gating effects was investigated using the current transient method.Three major electron defects were identified based on the time-constant spectra and Arrhenius law with energy levels of 0.169,0.240,and 0.405 eV,re-spectively.Finally,first-principles calculations were conducted to explore the potential structures of these defects.
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