首页|非化学计量溶液区熔法生长大尺寸InSe晶体及表征

非化学计量溶液区熔法生长大尺寸InSe晶体及表征

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硒化铟(InSe)是一种具有奇异物理性能的Ⅲ-Ⅵ族半导体材料，在光伏、光学、热电等领域有着广泛的应用潜力。由于InSe的非一致熔融特性及InSe、In6Se7和In4Se3之间复杂的包晶反应，制备大尺寸InSe晶体十分困难。本研究采用区熔法制备了 InSe晶体，该方法具有成本低、固液界面优化等优点。基于In-Se体系的包晶反应，发现In与Se的初始物质的量比对InSe晶体生长非常重要，本工作使用精确非化学计量的In0。52Se0。48溶液生长晶体，使InSe晶体的获得率达到83％左右。实验最终获得了 φ27 mm×130 mm的晶棒，并成功剥离出尺寸φ27 mm×50 mm的片状InSe单晶，XRD图谱中检测到(00l)衍射峰，说明晶体的质量良好。InSe晶体呈现六方结构，各元素在基体中均匀分布，在1800 nm波长下的透射率为～55。1％，带隙能量为～1。22 eV。在800 K下，InSe晶体沿(001)方向的最大电导率σ约为1。55×102S·m-1，垂直于(001)方向的最低热导率κ约为0。48W·m-1·K-1。上述结果表明，区熔法是制备大尺寸InSe晶体的一种有效方法，可用于制备多类材料。该工作制备的InSe的电学和热学行为也为今后InSe晶体的应用提供了重要参考。
Growth and Characterization of Large-size InSe Crystal from Non-stoichiometric Solution via a Zone Melting Method
Indium selenide(InSe)is a Ⅲ-Ⅵ group semiconductor with interesting physical properties and has wide potential applications in the fields of photovoltaics,optics,thermoelectrics,and so on.However,the production of large-size InSe crystal is difficult due to the inconsistent melting of In and Se elements and peritectic reactions between InSe,In6Se7and In4Se3 phases.In this work,a zone melting method,which has advantages of low cost and solid-liquid interface optimization,is employed for InSe crystal preparation.Because the initial mole ratio of In to Se is of great importance to InSe crystal growth,the non-stoichiometric In0.52Se0.48 solution was precisely used for growth based on the peritectic reaction of In-Se system,resulting in a InSe crystal productivity ratio at about 83％.An ingot with dimensions φ27 mm× 130 mm is obtained with a typical slab-like InSe crystal in the size ofφ27 mm×50 mm.The successfully peeled cleavage plane exhibits the good single-crystalline character as only(00l)peaks are detected in the X-ray diffraction pattern.This crystal has a hexagonal structure,and its elements are distributed uniformly in the matrix with transmittance of～55.1％at 1800 nm wavelength,band gap energy of about 1.22 eV,a maximum electrical conductivity(σ)of about 1.55×102 S·m-1 along the(001)direction,and a lowest thermal conductivity(κ)of about 0.48 W·m-1·K-1 perpendicular to the(001)direction at 800 K.These results imply that the zone melting method is indeed an effective approach for fabricating large-size InSe crystal,which could be applied for various fields.Above measured electrical and thermal behaviors are expected to provide a significant reference for InSe crystal application in the future.

InSe crystalzone melting methodnon-stoichiometricelectrical conductivitythermal conductivity

金敏、马玉鹏、魏天然、林思琪、白旭东、史迅、刘学超

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上海电机学院材料学院,上海 201306

上海交通大学 材料科学与工程学院,上海 200240

乌镇实验室,桐乡 314500

中国科学院 上海硅酸盐研究所,上海 200050

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InSe晶体 区熔法 非化学计量 电导率 热导率

国家自然科学基金国家自然科学基金国家自然科学基金Shanghai Academic/Technology Research LeaderOriental Scholars of Shanghai UniversitiesShanghai Risingstar ProgramShanghai Education Development Foundation & Shanghai Municipal Education CommissionOpen Research Fund of Key Laboratory of Polar Materials and Devices,Ministry of Education

52272006523711935200123123XD1421200TP202212223QA1403900

2024

10.15541/jim20230524

无机材料学报
中国科学院上海硅酸盐研究所

无机材料学报

CSTPCD北大核心
影响因子：0.768
ISSN：1000-324X
年,卷(期)：2024.39(5)
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