首页|W/Cr共掺杂对CaBi2Nb2O9陶瓷晶体结构及电学性能的影响

W/Cr共掺杂对CaBi2Nb2O9陶瓷晶体结构及电学性能的影响

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铌酸铋钙(CaBi2Nb2O9,CBN)是一种典型的铋层状结构压电材料,具有高居里温度(约 943℃)、高稳定性等特点,是 600℃以上高温压电振动传感器的重要候选功能元件,但其压电系数和高温电阻率较低,严重制约了CBN在高温压电振动传感器领域的实际应用。为了提高CBN压电陶瓷的高温稳定性,采用固相法制备了W/Cr共掺杂的CaBi2Nb1。975W0。025O9-x%Cr2O3(CBNW-x Cr,0<x≤0。2)单相铋层状结构压电陶瓷,研究了W/Cr元素共掺杂对晶体结构和电学性能的影响。结果表明:W/Cr元素共掺杂使压电陶瓷晶体结构由正交晶系向四方晶系转变,晶体结构畸变程度增强,并且压电性能和绝缘性能显著提高。当x=0。1 时,CBNW-0。1Cr压电陶瓷的居里温度为 931℃,压电系数为 15。6 pC/N,600℃时电阻率达到 106 Ω·cm量级,介电损耗仅为 0。029,该体系在高温压电领域有重要的潜在应用前景。
Effects of W/Cr Co-doping on the Crystal Structure and Electric Properties of CaBi2Nb2O9 Piezoceramics
Calcium bismuth niobate(CaBi2Nb2O9)is a typical bismuth layered structure piezoelectric material with high Curie temperature(about 943℃)and high stability,which is an important candidate functional element for high temperature vibration sensors above 600℃.However,its low piezoelectric coefficient and high temperature resistivity seriously limit the signal acquisition of high-temperature piezoelectric vibration sensor.To improve the comprehensive performance,in this work,W/Cr co-doped CaBi2Nb1.975W0.025O9-x%Cr2O3(CBNW-x Cr,0<x≤0.2)Aurivillius phase ceramics were prepared via conventional solid-state sintering route.The effects of W/Cr co-doping on the crystal structure and electrical properties of CBN piezoelectric ceramics were investigated.The results show that co-doping of W/Cr elements transforms crystal structure of the ceramics from orthorhombic to tetragonal crystal system,enhances distortion of the crystal structure,and significantly improves piezoelectric and insulating properties of the piezoelectric ceramics.When x=0.1,the Curie temperature is 931℃,the piezoelectric coefficient is 15.6 pC/N,the resistivity reaches the order of 106 Ω·cm at 600℃,and the dielectric loss is only 0.029,which endows the system an important potential application in the field of high-temperature piezoelectricity.

high-temperature piezoelectric ceramiccrystal structurepiezoelectric propertypseudo-tetragonal distortion

黄建锋、梁瑞虹、周志勇

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中国科学院 上海硅酸盐研究所,上海 200050

中国科学院大学 材料科学与光电工程中心,北京 100049

高温压电陶瓷 晶体结构 压电性能 赝四方畸变

国家自然科学基金重点项目

51932010

2024

无机材料学报
中国科学院上海硅酸盐研究所

无机材料学报

CSTPCD北大核心
影响因子:0.768
ISSN:1000-324X
年,卷(期):2024.39(8)