首页|K+掺杂双钙钛矿Cs2AgInCl6的发光性质

K+掺杂双钙钛矿Cs2AgInCl6的发光性质

扫码查看
采用固相球磨法制备了K+掺杂双钙钛矿Cs2AgInCl6纳米材料,该方法无需配体辅助,绿色环保.通过X射线衍射和拉曼光谱对晶体结构进行研究,通过激发光谱、发射光谱和时间分辨光谱对其发光性能进行研究.结果表明,Cs2AgInCl6为立方晶体,属于Fm3m空间群,由于宇称禁戒跃迁,其荧光量子产率(PLQY)低,小于0.1%.低于60%的K+掺杂主要取代Ag+的位置,引起Cs2AgInCl6的晶格膨胀,消除了晶格结构的反演对称性,打破了宇称禁戒跃迁,掺杂后Cs2AgInCl6的光致发光强度显著增强.K+的最佳掺杂比例为 40%,Cs2Ag06K0.4InCl6材料发射中心波长为640 nm,半高宽为180 nm,平均荧光寿命达到29.2 ns,PLQY达到10.5%.当K+掺杂比例超过60%,K+开始取代Cs+的位置,产物发生相变,出现立方相的Cs2-xK1+x-yAgyInCl6和单斜相的Cs2-xK1+xInCl6产物,这些产物由于强电子-声子耦合,非辐射复合占据主导地位.
Luminescence properties of K+doped double perovskite Cs2AgInCl6
K+doped double perovskite Cs2AgInCl6 nanomaterial was prepared by solid phase ball milling method,which is environmentally friendly without ligands.The crystal structure was studied by X-ray diffraction and Raman spectrum,and the luminescence properties were studied by excitation spectrum,emission spectrum,and time-resolved spectrum.The results show that the Cs2AgInCl6 is a cubic crystal,which belongs to Fm3m space group.Due to parity-forbidden transition,the photoluminescence quantum yield(PLQY)is low,less than 0.1%.When K+doping is less than 60%,it mainly replaces Ag+,which causes lattice expansion of Cs2AgInCl6,eliminates inversion symmetry of lattice structure,breaks parity forbidden transition,and enhances photoluminescence intensity of Cs2AgInCl6.The optimal doping ratio was 40%,the center wavelength of Cs2Ag0.6K0.4InCl6 was 640 nm,the half-height width was 180 nm,the average fluorescence lifetime was 29.2 ns and the PLQY reached 10.5%.When the doping ratio of K+exceeds 60%,K+begins to replace the position of Cs+,which results in the presence of cubic phase Cs2-xK1+x-yAgyInCl6 and monoclinic phase Cs2-xK1+xInCl6.These products are dominated by non-radiative recom-bination due to strong electron-phonon coupling.

double perovskiteK+dopingparity-forbidden transitionball milling

徐锦锃、高辉、陈国庆、王可可、胡金辉

展开 >

江南大学理学院,无锡 214122

江苏省轻工光电工程技术研究中心,无锡 214122

双钙钛矿 K+掺杂 宇称禁戒跃迁 球磨法

国家自然科学基金国家自然科学基金

1227534462375112

2024

无机化学学报
中国化学会

无机化学学报

CSTPCD北大核心
影响因子:0.665
ISSN:1001-4861
年,卷(期):2024.40(2)
  • 22