首页|I2界面修饰对全无机CsPbBr3钙钛矿太阳能电池性能的影响

I2界面修饰对全无机CsPbBr3钙钛矿太阳能电池性能的影响

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通过在CsPbBr3薄膜上旋涂一次I2的异丙醇溶液以修饰CsPbBr3吸光层,钝化CsPbBr3层表面缺陷,改善CsPbBr3薄膜形貌。同时通过利用环境友好的绿色溶剂水溶解CsBr,显著提高了其溶解度,减少了旋涂次数,简化了电池制备流程。实验结果表明,在CsPbBr3钙钛矿太阳能电池(perovskite solar cells,PSCs)中,使用5 mg·mL-1 I2的异丙醇溶液界面修饰的器件具有最佳光伏性能,其最高开路电压(open-circuit voltage,VOC)为 1。55 V,短路电流密度(short circuit current density,JSC)为7。45 mA·cm-2,填充因子(fill factor,FF)为 85。54%,光电转换效率(photoelectric conversion efficiency,PCE)达到了 9。88%。
Effect of I2 interface modification engineering on the performance of all-inorganic CsPbBr3 perovskite solar cells
The CsPbBr3 absorber layer made from CsBr aqueous solution was modified by spin-coating I2 isopropa-nol solution,which the surface defects of the CsPbBr3 layer were passivated,and the CsPbBr3 film with better mor-phology was obtained.The solar cells were optimized by exploring different spin-coating concentrations of CsBr methanol solution,and when 5 mg·mL-1 I2 isopropanol solution was used for interface modification,the perovskite film was significantly improved in morphology from the result of X-ray diffraction,scanning electron microscope and had the best optoelectronic performance.As a consequence,CsPbBr3-based perovskite solar cells(PSCs)with 5 mg·mL-1 I2 isopropanol solution can reach the best open-circuit voltage(VOC),short circuit current density(JSC),fill factor(FF)of 1.55 V,7.45 mA·cm-2,85.54%,respectively,and the ultimate photoelectric conversion efficiency(PCE)attained 9.88%.

all-inorganic perovskite solar cellCsPbBr3I2 interface modification

王则远、郑松志、李浩、翁敬菠、王威、汪杨、孙伟海

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华侨大学材料科学与工程学院,物理化学研究所,环境友好功能材料教育部工程研究中心福建省光电功能材料重点实验室,厦门 361021

全无机钙钛矿太阳能电池 CsPbBr3 I2界面修饰

国家自然科学基金华侨大学中青年教师科研提升资助计划

61804058ZQN-706

2024

无机化学学报
中国化学会

无机化学学报

CSTPCD北大核心
影响因子:0.665
ISSN:1001-4861
年,卷(期):2024.40(7)
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