The mechanical stripping method prepared the 2H-phase α-In2Se3(α-In2Se3(2H))nanosheets.The struc-ture and ferroelectric properties of the nanosheets were characterized by X-ray diffraction(XRD),Raman spectrosco-py,spherical aberration electron microscopy,and piezoelectric force microscopy.The nanosheets were identified asα-In2Se3(2H)ferroelectric materials with a special structure.Further,a planar four-terminal device based on α-In2Se3(2H)ferroelectricity was successfully constructed on the SiO2/Si substrate,and its photoresponse in all directions was investigated in detail.The results show that α-In2Se3(2H)with intrinsic structure has no photoresponse in both mutually perpendicular directions.After applying voltages at each end of the device,the α-In2Se3(2H)device shows obvious photoresponse in the mutually perpendicular directions.In particular,after utilizing a point voltage close to the direction of the easy polarization axis,the α-In2Se3(2H)device shows an anisotropic photoresponse.
万方数据