CeO2 is a commonly used rare earth polishing powder with excellent polishing performance.However,in its polish-ing research,balancing material removal rate(MRR)and surface roughness(Ra)has always been a key and difficult point.To explore this issue,the solvothermal synthesis method was used to synthesize spherical CeO2 with regular morphology,uniform particle size,and good dispersibility,which was doped with rare earth elements such as Pr and Y to study the changes in oxygen vacancy formation caused by rare earth doping and the impact of the resulting changes in Ce3+ratio on polishing performance.According to the Ce3+content on the material surface,combined with CMP polishing experiments,the results showed that polishing abrasives with high Ce3+content had better polishing effects on silicon wafers.Among them,Pr-doped CeO2 abrasives had a MRR of up to 445.71 nm/min,and the average roughness Ra of the silicon wafer surface af-ter polishing was 1.23 nm,respectively.Pr doping could change the chemical state of the Ce-based polishing powder sur-face,thereby affecting the polishing process.By regulating the morphology,particle size,and chemical state of Ce on the sur-face of cerium oxide,it was possible to achieve a high material removal rate and ensure good surface roughness for silicon wafers in rare earth-doped CeO2 polishing powder.This study could provide theoretical and technical guidance for the devel-opment of high-performance cerium oxide-based polishing powder.
关键词
CeO2/溶剂热法/CMP/稀土元素掺杂/Ce表面化学状态
Key words
CeO2/solvothermal method/CMP/rare earth element doping/Ce surface chemical state
万方数据