摘要
文章对CdTe薄膜太阳电池中的4个关键科学问题进行了讨论,并对电池器件的性能进行了研究,其中包括高质量硫化镉薄膜、背接触层、CdS/CdTe界面和CdCl2热处理性能的研究.文章作者研究了背电极接触层中Cu掺杂含量对电池性能的影响,通过改变背接触层中Cu的含量,可以改变Cu与Te反应产生的物相成分,从而发现以Cu1.4Te为主导的背接触缓冲层能有效地减少电池I—V曲线中的“翻转”(roll-over)现象,同时能有效地降低背接触势垒.此外,还研究了CdS/CdTe界面的CdCl2热处理反应,发现当热处理温度高于350℃时,CdS与CdTe之间的互扩散开始发生,此温度对应于CdS由立方相转变为六方相；而在550℃热处理后,S和Te互扩散形成的CdSxTe1-x化合物,其x值高达11％.通过优化电池制备工艺,获得了在AMl.5标准光源下高达14.6％的CdTe电池转换效率.
Abstract
Four critical issues related to high efficiency CdTe thin film solar cell are discussed and studied: the quality of CdS films, back contact, CdS/CdTe interface formation, and CdCl2 heat treatment.Through control of the copper doping in the back contact we have eliminated the roll-over phenomenon in the Ⅰ-Ⅴ curve.The back contact barrier was reduced by formation of a Cu1.4Te compound which has a good contact with CdTe.Systematic investigations showed that relatively strong interdiffusion at the CdS/CdTe interface began to occur at around 350℃.This temperature coincides with the CdS phase transformation from cubic to hexagonal.Both S-and Te-rich CdSxTe1-x alloy formed at the interface, with x as much as 11％.Through optimization of the cell fabrication process, a CdTe solar cell efficiency as high as 14.6％ has been obtained.
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