Graphene nanoribbons for next-generation high-performance electronics
Graphene nanoribbons possess a tunable bandgap and high carrier mobility,making them an ideal candidate for future high-performance nanoelectronic devices.However,the preparation of high-quality nanoribbons suitable for electronic applications has been a significant challenge.This article focuses on their nanoparticle-catalyzed fabrication and the use of this technique in growing high-quality nanoribbons embedded within hexagonal boron nitride stacks.Field-effect transistors based on this structure demonstrate excellent performance,showing promise for future carbon-based nanoelectronics.Finally,we explore the potential opportunities and challenges in this field.
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