As an important part of an intelligent photoelectric system,ultraviolet detector has been widely used in many fields in recent years.The research on self-powered heterojunction photodiode is particularly important.In this work,a dual-mode self-powered GaN/(BA)2PbI4 heterojunction ultraviolet photodiode is prepared and discussed.The GaN film is deposited on sapphire by metal-organic chemical vapor deposition,and then the(BA)2PbI4 film is spin-coated onto the surface of the GaN film to construct a planar heterojunction detector.The X-ray diffraction,energy-dispersive X-ray spectroscopy mapping and scanning electron microscope measurements are used to determine the quality of GaN and(BA)2PbI4 thin films.When the film is illuminated by 365 nm light with a power density of 421 μW/cm2 at 5 V bias,the responsiveness(R)and external quantum efficiency(EQE)are 60 mA/W and 20%,respectively.In self-powered mode,the rise time(τr)and decay time(τd)are 0.12 s and 0.13 s,respectively,illustrating the fast photogeneration process and recombination process for photo-excited electron-hole pairs.And,the R is 1.96×10-4 mA/W,owing to the development of space charge region across the interface of GaN thin film and(BA)2PbI4 thin film.The outcomes of this study unequivocally demonstrate the extensive potential and wide-ranging applicability of self-powered UV photodiodes based on the GaN/(BA)2PbI4 heterojunction configuration.Moreover,this research presents a new concept that provides a novel avenue to the ongoing development of intelligent optoelectronic systems.
关键词
宽禁带半导体/钙钛矿/异质结/自供电紫外探测器
Key words
wide band gap semiconductor/perovskite/heterojunction/self-powered ultraviolet detector
万方数据