基于GaSe/Ga2O3异质结的自供电日盲紫外光电探测器
GaSe/β-Ga2O3 heterojunction based self-powered solar-blind ultraviolet photoelectric detector
宿冉 1奚昭颖 1李山 1张嘉汉 2姜明明 3刘增 4唐为华1
作者信息
- 1. 南京邮电大学集成电路科学与工程学院(产教融合学院),氧化镓半导体创新中心(IC-GAO),南京 210023
- 2. 内蒙古大学电子信息工程学院,呼和浩特 010021;南京大学电子科学与工程学院,南京 210093
- 3. 南京航空航天大学物理学院,空天信息材料与物理工信部重点实验室,南京 211106
- 4. 内蒙古大学电子信息工程学院,呼和浩特 010021
- 折叠
摘要
氧化镓(Ga2O3)作为超宽禁带半导体在深紫外探测领域有极其重要的应用价值.它能与GaSe形成典型的Ⅱ型异质结构,促进载流子分离与传输,进而实现高性能的自供电探测.本文利用等离子体增强化学气相沉积(PECVD)技术在蓝宝石衬底上生长了Ga2O3 薄膜,并采用布里奇曼技术在氧化镓薄膜上生长了GaSe薄膜,构建了GaSe/β-Ga2O3 异质结光电探测器,分析其中涉及的光物理与界面物理问题.该探测器对深紫外光有很好的响应性能,在8V的电压下器件的暗电流仅为1.83 pA,254 nm光照下的光电流达到了6.5 nA,且UV-C/可见光(254 nm/600 nm)的抑制比约为354,即使在很小的光照强度下,响应度和探测度也达到了1.49 mA/W和 6.65×1011 Jones.同时,由于结界面上的空间电荷区形成的光伏效应,该探测器在零偏压下表现出自供电性能,开路电压为 0.2 V.此外,探测器有很好的灵敏度,无论是在电压恒定的条件下用不同光强的光照射探测器,还是在光强恒定条件下改变电压,器件都能快速响应.
Abstract
UV photodetectors have the advantages of high sensitivity and fast response speed.As an ultra-wide bandgap semiconductor,gallium oxide(Ga2O3)plays an extremely important role in detecting deep ultraviolet.It can form a typical type-II heterostructure with GaSe,promoting carrier separation and transport.In this work,Ga2O3 epitaxial films are grown on sapphire substrates by plasma-assisted chemical vapor deposition(PECVD).The GaSe films and GaSe/β-Ga2O3 heterojunction photodetectors are grown on gallium oxide films by Bridgeman technology.The detector has a good response to deep ultraviolet light,the dark current of the device is only 1.83 pA at 8 V,and the photocurrent reaches 6.5 nA at 254 nm.The UVC/Visible(254 nm/600 nm)has a high rejection ratio of about 354.At very small light intensities,the responsivity and detection can reach 1.49 mA/W and 6.65×1011 Jones,respectively.At the same time,due to the photovoltaic effect formed by the space charge region at the junction interface,the detector exhibits self-powered supply performance at zero bias voltage,and the open-circuit voltage is 0.2 V.In addition,the detector has a very good sensitivity.The device can respond quickly,whether it is irradiated with different light intensities under constant voltage,or with different voltages under constant light intensity.It can respond within milliseconds under a bias voltage of 10 V.This work demonstrates the enormous potential of heterojunctions in photoelectric detection by analyzing the photophysical and interface physical issues involved in heterojunction photodetectors,and provides a possibility for detecting the deep ultraviolet of gallium oxide.
关键词
光电探测器/氧化镓/硒化镓/自供电Key words
photoelectric detector/Ga2O3/GaSe/self-power引用本文复制引用
基金项目
国家自然科学基金青年科学基金(62204125)
国家自然科学基金青年科学基金(62305171)
国家重点研发计划(2022YFB3605404)
国家自然科学基金联合基金(U23A20349)
出版年
2024
国家科技期刊平台
NSTL
万方数据