物理学报2024,Vol.73Issue(13) :378-385.DOI:10.7498/aps.73.20240430

近存计算架构AI芯片中子单粒子效应

Neutron induced single event effects on near-memory computing architecture AI chips

杨卫涛 胡志良 何欢 莫莉华 赵小红 宋伍庆 易天成 梁天骄 贺朝会 李永宏 王斌 吴龙胜 刘欢 时光
物理学报2024,Vol.73Issue(13) :378-385.DOI:10.7498/aps.73.20240430

近存计算架构AI芯片中子单粒子效应

Neutron induced single event effects on near-memory computing architecture AI chips

杨卫涛 1胡志良 2何欢 3莫莉华 2赵小红 4宋伍庆 5易天成 2梁天骄 2贺朝会 3李永宏 3王斌 5吴龙胜 5刘欢 6时光6
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作者信息

  • 1. 西安电子科技大学微电子学院,西安 710071;西安交通大学核科学与技术学院,西安 710049
  • 2. 散裂中子源科学中心,东莞 523803
  • 3. 西安交通大学核科学与技术学院,西安 710049
  • 4. 空军工程大学航空工程学院,西安 710000
  • 5. 西安电子科技大学微电子学院,西安 710071
  • 6. 西安电子科技大学空间科学与技术学院,西安 710071
  • 折叠

摘要

利用中国散裂中子源大气中子辐照谱仪,对某款16 nm FinFET工艺制造的近存计算架构人工智能AI芯片进行了大气中子单粒子效应辐照测试研究.辐照测试中,在累积中子注量为1.51 ×1010 n/cm2(1 MeV以上)情况下,共探测到5类共计35个软错误,尤其是探测到不同于传统冯诺伊曼架构芯片单粒子效应的计算与存储单元同时发生单粒子效应新现象.基于所探测到的两类功能单元同时单粒子效应新现象,结合蒙特卡罗仿真模拟,初步给出了近存计算架构AI芯片内物理布局上,核心功能单元间可降低同时发生单粒子效应的安全间距建议.该研究为进一步探究非传统冯诺伊曼架构芯片单粒子效应提供了参考与借鉴.

Abstract

For the near-memory computing architecture AI chip manufactured by using 16 nm FinFET technology,atmospheric neutron single event effect irradiation tests are conducted for the first time in China by using the atmospheric neutron irradiation spectrometer(ANIS)at the China Spallation Neutron Source.During the irradiation,the YOLOV5 algorithm neural network running on the AI chip is used for real-time detection of target objects,including mice,keyboard,and luggage.The purpose of the test is to investigate the new single event effect that may occur on near-memory computing architecture AI chip.Finally,at an accumulated neutron fluence of 1.51×1010 n·cm-2(above 1 MeV),a total of 35 soft errors are detected in 5 categories.Particularly noteworthy is the observation of a new finding,where both computing and memory units experience single event effects simultaneously,which is different from the traditional von Neumann architecture chips.Based on the single event effects that occur simultaneously in these two units,combined with Monte Carlo simulation,a preliminary estimation is made of the physical layout distance between the computing unit and the memory unit on the chip.Furthermore,suggestions are proposed to simultaneously reduce the risk of single event effect in multi cells.This study provides valuable reference and insights for further exploring the single event effects in non-traditional von Neumann architecture chips.

关键词

近存计算/AI芯片/散裂中子源/大气中子/单粒子效应

Key words

near memory computing/AI chip/spallation neutron source/atmospheric neutron/single event effect

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基金项目

国家自然科学基金(12275211)

国家自然科学基金青年科学基金(62104260)

陕西省自然科学基础研究计划(2023-JC-QN-0015)

中央高校基本科研业务费专项(XJSJ23049)

出版年

2024
物理学报
中国物理学会,中国科学院物理研究所

物理学报

CSTPCDCSCD北大核心
影响因子:1.038
ISSN:1000-3290
参考文献量25
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