基于机械剥离制备的PEDOT:PSS/β-Ga2O3微米片异质结紫外光电探测器研究
Performance of UV photodetector of mechanical exfoliation prepared PEDOT:PSS/β-Ga2O3 microsheet heterojunction
宜子琪 1王彦明 1王硕 1隋雪 1石佳辉 1杨壹涵 1王德煜 2冯秋菊 1孙景昌 1梁红伟2
作者信息
- 1. 辽宁师范大学物理与电子技术学院,大连 116029
- 2. 大连理工大学集成电路学院,大连 116024
- 折叠
摘要
β-Ga2O3 具有超宽带隙(约 4.9 eV)、高的击穿电场(约 8 MV/cm)、良好的化学稳定性和热稳定性等优点,是一种很有前途的制备紫外光电探测器的候选材料.由于未掺杂的β-Ga2O3 为n型导电,所以制备p型β-Ga2O3面临很多困难,从而制约了同质PN结的开发与应用.聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)是一种p型导电聚合物,在 250-700 nm有着较高的透明度,采用p型有机材料PEDOT:PSS和n型β-Ga2O3构成的异质结可能为PN结型光电器件的研制提供一种途径.本文利用机械剥离法从β-Ga2O3 单晶衬底上剥离出单根β-Ga2O3 微米片,微米片的长度为 4 mm,宽度为 500 μm,厚度为 57 μm.将有机材料PEDOT:PSS涂覆在剥离出来的微米片的一侧制备出PEDOT:PSS/β-Ga2O3 无机-有机异质结的紫外光电探测器,器件表现出典型的整流特性,而且发现器件对 254 nm紫外光敏感,具有良好的自供电性能.该异质结紫外探测器的响应度和外量子效率分别为 7.13 A/W和 3484%,上升时间和下降时间分别为 0.25 s和 0.20 s.此外,3个月后器件对 254 nm紫外光的探测性能并未发现明显的衰减现象.本文的相关研究工作将对研发新型紫外探测器提供了新的思路和理论基础.
Abstract
Ultrawide-bandgap(4.9 eV)β-Ga2O3 material possesses exceptional properties such as a high critical-breakdown field(～8 MV/cm)and robust chemical and thermal stability.However,due to the challenges in the growth of p-type β-Ga2O3,the preparation of homojunction devices is difficult.Therefore,the utilization of heterojunctions based on β-Ga2O3 provides a viable approach for fabricating ultraviolet photodetectors.Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS),a p-type organic polymer material,exhibits high transparency in a 250-700 nm wavelength range.Additionally,its remarkable conductivity(>1000 S/cm),high hole mobility(1.7 cm2·V-1·s-1),and excellent chemical stability make it an outstanding candidate for serving as a hole transport layer.Consequently,the combination of p-type PEDOT:PSS with n-type β-Ga2O3 in a heterojunction configuration provides a promising way for developing PN junction optoelectronic devices.In this study,a β-Ga2O3 microsheet with dimensions:4 mm in length,500 μm in width,and 57 μm in thickness,is successfully exfoliated from a β-Ga2O3 single crystal substrate by using a mechanical exfoliation technique.Subsequently,a PEDOT:PSS/β-Ga2O3 organic/inorganic p-n heterojunction UV photodetector is fabricated by depositing the PEDOT:PSS organic material onto a side of the β-Ga2O3 microsheet.The obtained device exhibits typical rectification characteristics,sensitivity to 254 nm ultraviolet light,and impressive self-powering performance.Furthermore,the heterojunction photodetector demonstrates exceptional photosensitive properties,achieving a responsivity of 7.13 A/W and an external quantum efficiency of 3484%under 254 nm UV light illumination(16 μW/cm2)at 0 V.Additionally,the device exhibits a rapid photoresponse time of 0.25 s/0.20 s and maintains good stability and repeatability over time.Notably,after a three-month duration,the photodetection performance for 254 nm UV light detection remained unchanged,without any significant degradation.This in-depth research provides a novel perspective and theoretical foundation for developing innovative UV detectors and paving the way for future advancements in the field of optoelectronics.
关键词
β-Ga2O3/PEDOT:PSS/异质结/紫外光电探测器Key words
β-Ga2O3/PEDOT:PSS/heterojunction/UV photodetector引用本文复制引用
基金项目
国家自然科学基金(12075045)
大连市科技创新基金(2023JJ12GX016)
大连市科技创新基金(2023JJ12GX013)
大连市科技创新基金(2022JJ12GX023)
辽宁师范大学 2022年高端科研成果培育资助计划(22GDL002)
辽宁师范大学教育教学改革研究项目(LSJGJXFF202330)
出版年
2024
国家科技期刊平台
NSTL
万方数据