A large-format,high-resolution Hg1-xCdxTe infrared focal plane array(IRFPA)image sensor can be used in aerospace remote sensing and high-precision satellite imaging.The next generation of meteorological satellites in China will all adopt this type of image sensor.However,space high-energy protons can cause displacement damage effects in Hg1-xCdxTe IRFPA detectors and induce total ionizing dose(TID)effects in the pixel unit metal-oxide-semiconductor(MOS)transistors.This study focuses on a 55nm manufacturing process Hg1-xCdxTe IRFPA sensor widely used in image sensors by using a 2 pixel × 2 pixel basic pixel unit model for large-format arrays and constructing a Geant4 simulation model.Simulations are conducted for different proton irradiation fluences,including 1010,1011,1012 and 1013 cm-2.The results show the displacement damage under various fluences,including non-ionizing energy loss and displacement atom distribution.It is found that at a proton cumulative fluence of 1013 cm-2,in addition to considering the displacement damage effect in the Hg1-xCdxTe IRFPA sensor,attention must also be paid to the TID effects on the MOS transistors in the pixel units.Additionally,this study provides a preliminary assessment of the damage conditions in the space environment based on simulation results.This study provides crucial data for supporting the space applications of future large-format Hg1-xCdxTe IRFPA image sensors.
维普
万方数据