首页|红外调制光致发光光谱技术:从宽波段覆盖到微区高通量测量

红外调制光致发光光谱技术:从宽波段覆盖到微区高通量测量

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光致发光光谱能够揭示半导体材料带隙、杂质能级等电子结构信息,还可以分析界面、载流子寿命、量子效率,在紫外-近红外波段得到广泛应用。在约4 μm以长红外波段,由于热背景干扰强、光致发光信号弱、探测能力低,光致发光光谱研究长期受限。本文介绍了利用傅里叶变换光谱仪测量光致发光光谱的常规方法,简述了为突破红外波段困境于1989年提出、历经20多年发展的连续扫描傅里叶变换双调制光致发光光谱方法及所受机理局限;分析了 2006年报道的基于步进扫描傅里叶变换光谱仪的红外调制光致发光光谱方法的抗干扰、灵敏度、信噪比优势,列举了国际上诸多研究组对红外调制光致发光光谱方法有效性的例证和以此取得的应用研究进展;总结了近年来宽波段、高通量扫描成像和空间微区分辨红外调制光致发光光谱测试方法发展以及从0。56-20 μm可见-远红外宽波段覆盖到千级通道光谱高通量检测、2-3 μm微区分辨红外调制光致发光光谱技术进步,列举了应用研究稀氮/稀铋量子阱、HgCdTe外延膜、InAs/GaSb超晶格等可见-远红外半导体材料阶段结果和合作研究典型进展。本文展现了红外调制光致发光光谱方法先进性和宽波段、高通量扫描成像与空间微区分辨光谱测试方法有效性,预见了未来进一步应用研究方向。
Infrared-modulated photoluminescence spectroscopy:From wide-band coverage to micro-area and high-throughput scanning imaging
Photoluminescence(PL)spectroscopy has been widely used in the ultraviolet-near-infrared spectral range for over seventy years since its early reporting in the 1950's,because it not only reveals the electronic structure information about such as band gap and impurity energy levels of semiconductor materials,but also serves as an efficient tool for analyzing interfacial structures,carrier lifetime,and quantum efficiency.However,in the infrared band beyond about 4 μm,the study of PL spectrum has been limited for decades due to strong thermal background interference,weak PL signals and low detection capability.In this review,a traditional PL method is introduced based on a Fourier transform infrared(FTIR)spectrometer,and a continuous-scan FTIR spectrometer-based double-modulation PL(csFTIR-DMPL)method is briefly described which was proposed in 1989 for breaking through the dilemma of the infrared band,and developed continuously in the later more than 20 years,with its limitations emphasized.Then,a step-scan FTIR spectrometer-based infrared modulated PL(ssFTIR-MPL)method reported in 2006 is analyzed with highlights on its advantages of anti-interference,sensitivity and signal-to-noise ratio.The effectiveness demonstration and application progress of this method in many research groups around the world are listed.Further developments in recent years are then summarized of wide-band,high-throughput scanning imaging and spatial micro-resolution infrared modulated PL spectroscopic experimental systems,and the technological progresses are demonstrated of infrared-modulated PL spectroscopy from 0.56-20 μm visible-far-infrared broadband coverage to>1000 high-throughput spectra imaging and≤2-3 μm spatial micro-resolution.Typical achievements of collaborative research are enumerated in the visible-far-infrared semiconductor materials of dilute nitrogen/dilute bismuth quantum wells,HgCdTe epitaxial films,and InAs/GaSb superlattices.The results presented demonstrate the advancement of infrared modulated PL spectroscopy and the effectiveness of the experimental systems,and foresee further application and development in the future.

photoluminescenceFourier transform infrared spectrometerstep scansemiconductor

邵军、陈熙仁、王嫚、陆卫

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中国科学院上海技术物理研究所,红外物理国家重点实验室,上海 200083

国科大杭州高等研究院,物理与光电工程学院,杭州 310024

中国科学院上海技术物理研究所,红外探测全国重点实验室,上海 200083

中国科学院大学,北京 100049

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光致发光 傅里叶变换红外光谱仪 步进扫描 半导体

2025

物理学报
中国物理学会,中国科学院物理研究所

物理学报

北大核心
影响因子:1.038
ISSN:1000-3290
年,卷(期):2025.74(1)