首页|紫外光激发金属氧化物气体传感器研究进展

紫外光激发金属氧化物气体传感器研究进展

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近年来,随着环境污染问题日益严重,对传感器的要求也在不断提升.传统的金属氧化物气体传感器虽然具有良好的响应,但是工作温度高和选择性差制约了其发展.紫外光激发与形貌调控、金属掺杂和构建异质结相结合被认为是解决这一问题的有效途径.综述了近年来紫外光激发的金属氧化物气体传感器的研究进展,详细探究了紫外光激发金属氧化物气体传感器的工作机理,并对紫外光激发下以ZnO、TiO2、SnO2、In2O3四种金属氧化物为敏感材料的半导体型气体传感器、气敏结构以及器件设计与器件集成的研究进展进行了综述.最后,指出了紫外光激发金属氧化物气体传感器在实际应用中可能面临的一些挑战和问题.
Research Progress of UV-Activated Metal Oxide Gas Sensors
In recent years,with the increasingly serious environmental pollution problems,the requirements for sensors are also increasing.Although the traditional metal oxide gas sensor has good response,its development is restricted by high operating temperature and poor selectivity.The combination of ultraviolet(UV)activation,morphology control,metal doping and heterojunction construction is considered to be an effective way to solve this problem.The research progress of UV-activated metal oxide gas sensors in recent years is reviewed,and the working mechanism of UV-activated metal oxide gas sensors is investigated in detail.The research progresses of semiconductor gas sensors,gas-sensitive structures,device design and device integration using ZnO,TiO2,SnO2 and In2O3 as sensitive materials under ultraviolet activation are reviewed.Finally,some possible challenges and problems in the practical application of UV-activated metal oxide gas sensors are pointed out.

gas sensorlight activationultraviolet lightmetal oxide semiconductorgas-sensitive property

顾子琪、曹兆玉、薄良波、郑晓虹

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上海应用技术大学材料科学与工程学院,上海 201418

博兴县综合检验检测中心,山东 滨州 256500

气体传感器 光激发 紫外光 金属氧化物半导体 气敏性能

2025

微纳电子技术
中国电子科技集团公司第十三研究所

微纳电子技术

影响因子:0.283
ISSN:1671-4776
年,卷(期):2025.62(1)