摘要
简要阐述了磁控溅射技术的原理及其应用于铜(Cu)薄膜沉积领域的优势.重点综述了溅射时间、溅射功率、基底偏压、溅射气压和基底温度等关键工艺参数对磁控溅射沉积Cu薄膜组织结构、表面形貌、均匀性、粒径、表面粗糙度、电阻率、溅射速率、薄膜生长择优取向及应力等方面的影响.此外,还介绍了不同基底材料(不同材料种类、不同晶粒取向及不同粗糙度)、不同粒径和纯度的靶材等因素对Cu薄膜性能的影响.总结了单因素变化对Cu薄膜性能的影响规律和作用机理,为高质量Cu薄膜制备提供理论参考.最后,对磁控溅射Cu薄膜的未来研究和发展方向进行了展望.
Abstract
The principles of magnetron sputtering technology and its advantages in the field of copper thin film deposition are briefly described.The effects of key process parameters such as sputtering time,sputtering power,substrate bias,sputtering air pressure and substrate temperature on the microstructure,surface morphology,uniformity,grain size,surface roughness,resistivity,sputtering rate,film growth preferred orientation and stress of magnetron sputtering copper thin films are reviewed.In addition,the effects of different substrate materials(different material types,different grain orientations and different roughness),different grain sizes and purity of targets on the properties of copper thin films are also introduced.The influence law and mechanism of single factor change on the properties of copper thin films are summarized,providing theoretical reference for the preparation of high-quality copper thin films.Finally,the future research and development direction of magnetron sputtering copper thin film are prospected.
维普
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