A composite substrate structure and integrated preparation process for thin-film gallium arsenide(GaAs)solar cell was presented.The thickness of the composite flexible substrate of the thin-film GaAs solar cell is reduced to 15 μm by micro-machining method,and the overall surface density of the thin-film GaAs solar cell is as low as 95 g/m2.The metal microholes formed by photolithography make gallium arsenide electrically conductive to the back electrode of the substrate.In addition,the proposed composite substrate integrated preparation process can avoid the influence of traditional thin-film GaAs cell bonding process on GaAs epitaxial layer,and improve the process reliability of solar cell.The results of electrical performance test and fatigue test of thin-film GaAs solar cell show that the integrated preparation process can improve the feasibility of the process and reduce the complexity of the process,while the electrical performance of the cell is not significantly reduced.The thin-film GaAs solar cell with composite substrate and its integrated preparation process have a wide application prospect in the future.
关键词
薄膜太阳电池/复合衬底/砷化镓(GaAs)/柔性薄膜电池/面密度
Key words
thin-film solar cell/composite substrate/gallium arsenide(GaAs)/flexible thin film cell/surface density
维普
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