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双面化学机械抛光工艺中抛光工况优化

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在双面化学机械抛光过程中,晶圆与抛光垫之间的相对运动状态是影响晶圆表面加工质量,尤其是全局平坦度的关键因素.为了提高在双面化学机械抛光过程中晶圆表面全局平坦度,在双面化学机械抛光基本尺寸结构的基础上,构建了数学模型,并以速度平方代替速度对数学模型进行了有效的简化.然后,利用Python软件对晶圆相对上、下抛光垫的运动状态进行仿真模拟,引入变量β来量化晶圆表面全局平坦度.仿真结果表明,在机械结构恒定时,晶圆表面全局平坦度由上、下抛光垫自转角速度以及行星轮公转和自转角速度决定.上、下抛光垫自转角速度对晶圆表面全局平坦度的影响强于行星轮公转和自转角速度,并进一步提出了一种工况优化策略.
Working Condition Optimization in Double-Sided Chemical-Mechanical Polishing Process
In the process of double-sided chemical-mechanical polishing,the relative motion state between the wafer and the polishing pad is a key factor affecting the processing quality of the wafer surface,especially the global flatness.In order to improve the global flatness of the wafer surface in the process of double-sided chemical-mechanical polishing,a mathematical model was constructed on the basis of the basic dimensional structure of double-sided chemical-mechanical polishing,and the mathematical model was effectively simplified by replacing the velocity with the velocity squared.Then,Python software was used to simulate the motion state of the wafer relative to the upper polishing pad and lower polishing pad,and the variable β was introduced to quantify the global flatness of the wafer surface.The simulation results show that the global flatness of the wafer surface is determined by the rotation angular velocities of the upper and lower polishing pads,and the revolution and rotation angular velocities of the planetary wheel when the mechanical structure is constant.The influence of the rotation angular velocities of the upper and lower polishing pads on the global flatness of the wafer surface is stronger than that of the revolution and rotation angular velocities of the planetary wheel,and a working condition optimization strategy is further proposed.

double-sided chemical-mechanical polishingmathematical modelworking condition optimizationwafer rotationglobal flatness

王现刚、刘奕然、曹军

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华东理工大学机械与动力工程学院,上海 200237

上海集成电路材料研究院,上海 201800

双面化学机械抛光 数学模型 工况优化 晶圆自转 全局平坦度

2025

微纳电子技术
中国电子科技集团公司第十三研究所

微纳电子技术

影响因子:0.283
ISSN:1671-4776
年,卷(期):2025.62(1)