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立式雾化辅助CVD系统的设计与实现

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雾化辅助化学气相沉积(CVD)技术是一种高质量氧化物薄膜的低成本制备方法.设计并搭建了一套立式雾化辅助CVD系统,该系统包含了雾化源、立式反应腔体、加热、水冷和尾气处理模块.采用该系统制备了 SnO2薄膜,采用X射线衍射仪(XRD)对薄膜样品进行分析,并用扫描电子显微镜(SEM)观察样品表面形貌.实验结果表明:采用所设计的立式雾化辅助CVD系统制备出了沿(200)晶面生长的SnO2薄膜,其(200)衍射峰半高宽为0.22°.SnO2薄膜表面较大的晶粒呈现类金字塔状,薄膜表面颗粒尺寸较为均匀.通过计算得出薄膜表面最大颗粒平均粒径为145 nm.所设计的系统结构合理、操作简单,制备的薄膜具有较高的质量.
Design and Implementation of Vertical Atomization Assisted CVD System
The atomization assisted chemical vapor deposition(CVD)technology is a method for low-cost preparation of high-quality oxide thin films.A vertical atomization assisted CVD system was designed and constructed,which included atomization source,vertical reaction chamber,heating,water cooling and exhaust gas treatment modules.SnO2 thin film was prepared by the system,X-ray diffractometer(XRD)was used to analyze the thin film samples,and the surface morphology of the samples was observed by scanning electron microscope(SEM).The experimental results show that the SnO2 thin film growing along the(200)crystal plane is prepared by the designed vertical atomization assisted CVD system.The half-height and width of(200)diffraction peak for the SnO2 thin film is 0.22°.The larger grains on the surface of the SnO2 thin film are pyramid-like,and the particle size on the surface of the thin film is relatively uniform.The calculated average particle size of maximum particles on the surface of the thin film is 145 nm.The designed system has reasonable structure and simple operation,and the prepared film has high quality.

atomization assisted chemical vapor deposition(CVD)thin film deposition system designvertical chamberSnO2 thin filmstructure and morphology

赵丹、向星承、詹宇、陈茵豪、秦源涛、肖黎、龚恒翔

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重庆理工大学理学院,重庆 400054

龙泰洋健(重庆)医疗科技有限公司,重庆 400054

雾化辅助化学气相沉积(CVD) 薄膜沉积系统设计 立式腔体 SnO2薄膜 结构与形貌

2025

微纳电子技术
中国电子科技集团公司第十三研究所

微纳电子技术

影响因子:0.283
ISSN:1671-4776
年,卷(期):2025.62(1)