ICP etching process of subwavelength Al gratings for AR display technology
Aluminum(Al)is a preferred material for the grating waveguides in augmented reality(AR)devices due to its commendable light reflectivity and low coefficient of thermal expansion.This paper investigates the dry etching process of Al utilizing the inductively coupled plasma(ICP)etching system NE-550 manufactured by ULVAC.Silicon dioxide(SiO2)serves as the etching mask,while a blend of Cl2/BCl3 gases is employed as the process gas.By setting the experimental process parameters,the ICP source power,radio frequency bias power,chamber pressure,and gas flow rate are systematically examined to discern their impact on the etching rate of Al and the selectivity concerning the mask(SiO2).With the optimization of these process parameters,a grating groove structure characterized by a level bottom and perpendicular sidewalls is obtained.This research contributes insights into the optimization and technological advancements of sub-wavelength scale grating etching processes.
inductively coupled plasma etchingsub-wavelength gratingaluminumliquid crystal on siliconaugmented reality
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