Raman spectroscopic analysis of the third generation semiconductor material Gallium Nitride
Gallium Nitride has become the preferred material in the manufacturing of high-frequency electronic devices,high-power electronic devices and microwave power devices in the third generation semiconductor materials.How to achieve epitaxy growth of high quality Gallium Nitride materials and accurately characterize the characteristics of Gallium Nitride epitaxy materials requires in-depth Raman spectroscopic analysis of Gallium Nitride epitaxy materials.The experimental results show that the best scanning range is 100～1 000 cm-1,the best exposure time is 5 seconds,and the best optical hole diameter is 100 μm,so as to more accurately characterize Gallium Nitride epitaxial materials,and thus promote the performance of microwave power devices.
third generation semiconductor materialsGallium NitrideRaman spectroscopy
万方数据
维普
