Gallium Nitride has become the preferred material in the manufacturing of high-frequency electronic devices,high-power electronic devices and microwave power devices in the third generation semiconductor materials.How to achieve epitaxy growth of high quality Gallium Nitride materials and accurately characterize the characteristics of Gallium Nitride epitaxy materials requires in-depth Raman spectroscopic analysis of Gallium Nitride epitaxy materials.The experimental results show that the best scanning range is 100～1 000 cm-1,the best exposure time is 5 seconds,and the best optical hole diameter is 100 μm,so as to more accurately characterize Gallium Nitride epitaxial materials,and thus promote the performance of microwave power devices.
关键词
第三代半导体材料/氮化镓/拉曼光谱
Key words
third generation semiconductor materials/Gallium Nitride/Raman spectroscopy
维普
万方数据